| PART |
Description |
Maker |
| APM0882-P29-13 |
High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor ...
|
| ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P |
C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
High Linearity Enhancement Mode
ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
|
Agilent Technologies, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF-35143 |
ATF-35143 · SC-70 (SOT-343) Low Noise 21 dBm OIP3
|
Agilent (Hewlett-Packard)
|
| ATF-52189 |
ATF-52189 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in SOT-89 package
|
Agilent (Hewlett-Packard)
|
| MP4T24335 MP4T243 MP4T24300 |
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| ATF-53189 |
ATF-53189 · Single Voltage E-pHEMT Low Noise 40 dBm OIP3 in SOT-89 package
Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
| MIC2215 MIC2215-PPPBML MIC2215-PMMBML MIC2215-AAAB |
4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Replaced by PTH05060W :
GT 24C 24#16 PIN PLUG
Tirple High PSRR/ Low Noise uCap LDO
Tirple High PSRR, Low Noise uCap LDO
Tirple High PSRR Low Noise uCap LDO
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| P4SMA8.0 P4SMA9.0A P4SMA9.0C P4SMA9.0CA P4SMA9.0 P |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor
Single Output LDO, 200mA, Fixed(3.0V), High PSRR, Low Noise 5-SOT-23 -40 to 85 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Fixed(3.0V), Low Noise, High PSRR 5-SOT-23 -40 to 125 400W表面贴装瞬态电压抑制器
Single Output LDO, 200mA, Fixed(1.8V), High PSRR, Low Noise 5-SOT-23 -40 to 85 400W表面贴装瞬态电压抑制器
400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Adj.(1.2 to 5.5V), Low Noise, High PSRR 6-SOT-23 -40 to 125 400W表面贴装瞬态电压抑制器
Single Output LDO, 250mA, Fixed(2.5V), High PSRR, Low Noise 6-SOT-223 -40 to 85 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Fixed(4.7V), High PSRR, Low Noise 5-SOT-23 -40 to 125
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 40.0 A; IC(max) @ 100°: 20.0 A
Single Output LDO, 200mA, Fixed(2.85V), High PSRR, Low Noise 5-SOT-23 -40 to 85
Single Output LDO, 250mA, Fixed(1.8V), High PSRR, Low Noise 6-SOT-223 -40 to 85
|
ON Semiconductor
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
http://
|
| CHA2159 |
55-65GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semiconductors
|
